Friday, May 6, 2011

Intel's 3D Tri-Gate Transistor – Evolution in Transistor Technology

Intel has added one more major achievement in its list of inventions by announcing that it has build the world's first 3D transistor, also called “Tri-Gate” transistor. Intel's 3D transistor has been introduced as a new evolution in transistor technology. The 3D transistor uses three dimensional thin silicon fin that rises above the surface of the chip. Intel demonstrated the 3D transistor in a 22nm microprocessor codenamed as “Ivy Bridge” that will be introduced as in mass production in the second half of this year. Intel has not stopped here as it also announced that it is also planning to develop 14nm and 10nm chips in 2013 and 2015 respectively.

Why 3D transistors introduced?
According to Moore's law, it is required to double the number of transistors every two year on a chip. As this was being difficult in a traditional way so building a 3-D structure transistor was needed.

Benefits of 3D “Tri-Gate” Transistors
In three-dimensional transistors, chips can perform at lower voltage with much lower leakage. So 3D transistors will enhance the performance of processor with 37% more speed. In comparison with 2D transistors, 3D transistor will use 50% less power and more suitable for small hand-held devices.

Intel's 3D “Tri-Gate” transistor will offer more flexibility to product designers to make the devices more advanced and even smarter. Intel has also announced that its Tri-Gate transistors will be used in all its products including atom chips as well. So these 3D “Tri-Gate” transistors will provides new technological advancement in products with cost effectiveness feature.

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